MSC82003
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI MSC82003
is Designed for
General Purpose Class C Power
Amplifier Applications up to 2300 MHz.
PACKAGE STYLE .250 2L FLG
A
ØD
C
E
.060 x 45°
CHAMFER
B
FEATURES:
•
P
G
= 10 dB min. at 3 W/ 2,000 MHz
•
Hermetic Microstrip Package
•
Omnigold™
Metalization System
DIM
A
L
G
H
J
F
I
K
M
NP
MINIMUM
inches / mm
MAXIMUM
inches / mm
.028 / 0.71
.740 / 18.80
.245 / 6.22
.128 / 3.25
.125 / 3.18
.110 / 2.79
.117 / 2.97
.560 / 14.22
.790 / 20.07
.225 / 5.72
.165 / 4.19
.003 / 0.08
.058 / 1.47
.119 / 3.02
.149 / 3.78
.032 / 0.81
.255 / 6.48
.132 / 3.35
.117 / 2.97
.570 / 14.48
.810 / 20.57
.235 / 5.97
.185 / 4.70
.007 / 0.18
.068 / 1.73
.135 / 3.43
.187 / 4.75
MAXIMUM RATINGS
I
C
V
CC
P
DISS
T
J
T
STG
θ
JC
600 mA
35 V
21.8 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65 C to +200 C
15
O
C/W
O
O
B
C
D
E
F
G
H
I
J
K
L
M
N
P
Common Base
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CER
BV
EBO
I
CBO
h
FE
C
ob
P
G
η
C
T
C
= 25 C
O
NONETEST
CONDITIONS
I
C
= 1.0 mA
I
C
= 5.0 mA
I
E
= 1.0 mA
V
CB
= 28 V
V
CE
= 5.0 V
V
CB
= 28 V
V
CC
= 28 V
P
OUT
= 3.0 W
I
C
= 200 mA
f = 1.0 MHz
f = 2.0 GHz
R
BE
= 10
Ω
MINIMUM TYPICAL MAXIMUM
45
45
3.5
1.0
15
120
3.5
10
35
UNITS
V
V
V
mA
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/2
ASI [ ADVANCED SEMICONDUCTOR ]
