NE64535
NPN SILICON LOW NOISE RF TRANSISTOR
DESCRIPTION:
The
ASI NE64535
is a Common
Emitter Device Designed for Low Noise
Class A Amplifier Applications up to 4.0
GHz.
PACKAGE STYLE .085 4L SQ
FEATURES INCLUDE:
•
N
F
= 1.6 dB Typical @ 2 GHz
•
S
21E
2
= 11 dB Typical @ 2 GHz
•
Hermetic Ceramic Package
MAXIMUM RATINGS:
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
60 mA
25 V
12 V
1.5 V
300 mW @ T
A
≤
75 C
O
-65 °C to +200 °C
-65 °C to +150 °C
85 °C/W
T
C
= 25 °C
1 = Collector
2 & 4 = Emitter
3 = Base
ORDER CODE: ASI10752
CHARACTERISTICS
SYMBOL
I
CBO
I
EBO
h
FE
C
CB
f
t
S
21E
NF
GA
2
TEST CONDITIONS
V
CB
= 8 V
V
EB
= 1.0 V
V
CE
= 8.0 V
V
CB
= 10 V
V
CE
= 10 V
V
CE
= 8 V
V
CE
= 8 V
I
C
= 20 mA
I
C
= 20 mA
I
C
= 10 mA
f = 1.0 GHz
f = 2.0 GHz
f = 2.0 GHz
I
C
= 7.0 mA
MINIMUM TYPICAL MAXIMUM
100
1.0
50
250
0.6
8.0
10
10
8.5
11
1.6
11
2.5
UNITS
nA
µ
A
---
pF
GHz
dB
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
