PT9702B
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI PT9702B
is a Common
Emitter Device Designed for Class AB
and C Amplifier Applications in the 220
- 400 MHz Military Communications
Band.
PACKAGE STYLE .280 4L STUD
FEATURES INCLUDE:
•
Gold Metalization
•
Emitter Ballasting
•
High Gain
MAXIMUM RATINGS
I
C
V
CES
V
CEO
P
DISS
T
J
T
STG
θ
JC
2.0 A
60 V
30 V
40 W @ T
C
= 25 °C
-65 °C to +200 °C
-55 °C to +200 °C
4.0 C/W
O
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CBO
h
FE
C
ob
P
G
η
C
I
C
= 20 mA
I
C
= 20 mA
I
E
= 2.0 mA
V
CB
= 30 V
V
CE
= 5.0 V
V
CB
= 28 V
V
CE
= 28 V
T
C
= 25 °C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
30
60
4.0
2.0
UNITS
V
V
V
mA
---
pF
dB
%
I
C
= 100 mA
f = 1.0 MHz
P
out
= 20 W
f = 400 MHz
10
150
24
7.0
60
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
