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PT9701B 参数 Datasheet PDF下载

PT9701B图片预览
型号: PT9701B
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅射频功率晶体管 [NPN SILICON RF POWER TRANSISTOR]
分类和应用: 晶体小信号双极晶体管射频小信号双极晶体管放大器
文件页数/大小: 1 页 / 26 K
品牌: ASI [ ADVANCED SEMICONDUCTOR ]
   
PT9701B
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI PT9701B
is a Common
Emitter Device Designed for Class A ,
AB and C Amplifier Applications in the
225 - 400 MHz Military
Communications Band.
PACKAGE STYLE .280 4L STUD
FEATURES INCLUDE:
Gold Metalization
Emitter Ballasting
High Gain
MAXIMUM RATINGS
I
C
V
CES
P
DISS
T
J
T
STG
θ
JC
1.25 A
45 V
14 W @ T
C
= 25
O
C
-55
O
C to +200
O
C
-55
O
C to +200
O
C
12
O
C/W
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
h
FE
C
ob
P
G
η
C
I
C
= 20 mA
I
C
= 10 mA
I
E
= 1.0 mA
V
CE
= 5.0 V
V
CB
= 28 V
V
CE
= 28 V
T
C
= 25
O
C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
25
45
3.5
UNITS
V
V
V
---
I
C
= 200 mA
f = 1.0 MHz
P
out
= 5.0 W
f = 400 MHz
15
7.0
10
50
12
55
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1