PT9730
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI PT9730
is Designed for
Class C, 28 V High Band Applications
up to 175 MHz.
FEATURES:
•
Common Emitter
•
P
G
= 10 dB at 10W/175 MHz
•
Omnigold™
Metalization System
PACKAGE STYLE .380 4L STUD
.112x45°
A
B
C
E
ØC
E
B
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
CES
V
EBO
P
DISS
T
J
T
STG
θ
JC
O
1.0 A
60 V
35 V
60 V
4.0 V
10 W @ T = 25 °C
-65 ° C to +200 °C
-65 °C to +150 °C
17.5 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
D
H
I
J
#8-32 UNC-2A
F
E
G
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CES
h
FE
C
ob
P
G
η
C
I
C
= 50 mA
T
C
= 25°C
NONETEST
CONDITIONS
I
C
= 200 mA
I
C
= 100 mA
I
E
= 10 mA
V
CE
= 25 V
V
CE
= 10 V
V
CB
= 28 V
V
CC
= 28 V
P
OUT
= 10 W
I
C
= 500 mA
f = 1.0 MHz
f = 175 MHz
MINIMUM TYPICAL MAXIMUM
60
60
35
4.0
0.5
20
150
12
13
60
UNITS
V
V
V
V
mA
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
