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PTB32003X 参数 Datasheet PDF下载

PTB32003X图片预览
型号: PTB32003X
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅射频功率晶体管 [NPN SILICON RF POWER TRANSISTOR]
分类和应用: 晶体晶体管射频放大器局域网
文件页数/大小: 1 页 / 18 K
品牌: ASI [ ADVANCED SEMICONDUCTOR ]
   
PTB32003X
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI PTB32003X
is Designed for
Common Base General purpose
amplifier Applications up to 4.2 GHz.
PACKAGE STYLE .250 2L FLG
A
ØD
C
E
.060 x 45°
CHAMFER
FEATURES INCLUDE:
Diffused Emitter Ballasting Resistor
Hermetic Flange Package
Gold Metelization
B
G
L
H
J
F
I
K
M
NP
MAXIMUM RATINGS
I
C
V
CBO
P
DISS
T
J
T
STG
θ
JC
500 mA
40 V
7.6 W @ T
C
= 75 °C
-65 °C to +200 °C
-65 °C to +200 °C
12 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
MINIMUM
inches / mm
MAXIMUM
inches / mm
.028 / 0.71
.740 / 18.80
.245 / 6.22
.128 / 3.25
.125 / 3.18
.110 / 2.79
.117 / 2.97
.560 / 14.22
.790 / 20.07
.225 / 5.72
.165 / 4.19
.003 / 0.08
.058 / 1.47
.119 / 3.02
.149 / 3.78
.032 / 0.81
.255 / 6.48
.132 / 3.35
.117 / 2.97
.570 / 14.48
.810 / 20.57
.235 / 5.97
.185 / 4.70
.007 / 0.18
.068 / 1.73
.135 / 3.43
.187 / 4.75
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CES
I
CBO
I
EBO
C
cb
C
ce
P
OUT
η
C
G
P
T
C
= 25 °C
TEST CONDITIONS
I
C
= 2.0 mA
I
C
= 10 mA
V
CE
= 24 V
V
EB
= 1.5 V
V
CB
= 24 V
V
CB
= 24 V
V
EB
= 1.5 V
V
EB
= 1.5 V
f = 1.0 MHz
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
40
40
20
0.4
3.0
0.6
2.5
35
8.0
UNITS
V
V
µA
µA
pF
pF
W
%
dB
V
CC
= 24 V
f = 3.0 GHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1