PTF10019
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION:
The
ASI PTF10019
is Designed for
Cellular, GSM, and D-AMPS
applicarions from 860 tp 960 MHz.
PACKAGE STYLE
FEATURES:
•
70 W, 860-960 MHz
•
Internally matched
•
Omnigold™
Metalization System
•
Silicon Nitride Passivated
MAXIMUM RATINGS
V
DSS
V
GS
P
DISS
T
J
T
STG
θ
JC
65 V
±20
V
215 W @ T
C
= 25 °C
-40 °C to +200 °C
-40 °C to +150 °C
0.8 °C/W
1 = DRAIN
2 = GATE
3 = SOURCE
CHARACTERISTICS
SYMBOL
V
(BR)DSS
I
DSS
V
GS(th)
G
fs
P
G
η
C
P-1dB
Ψ
V
GS
= 0 v
V
DS
= 26 V
V
DS
= 10 V
V
DS
= 10 V
T
C
= 25 °C
NONETEST
CONDITIONS
I
D
= 25 mA
I
D
= 75 mA
I
D
= 3.0 A
P
OUT
= 70 W
I
DQ
= 600 mA
MINIMUM TYPICAL MAXIMUM
65
1.0
3.0
3.0
13.0
45
70
14.5
50
75
10:1
5.0
UNITS
V
mA
V
Siemens
dB
%
W
---
V
DD
= 28 V
f = 960 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
