SD1169
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI SD1169
is a Common
Emitter Device Designed for Class C
Amplifier Applications in HF Land
Mobile Radios.
PACKAGE STYLE .500 4L STUD
FEATURES INCLUDE:
•
Aluminum Metalization
•
Emitter Ballasting
MAXIMUM RATINGS
I
C
V
CB
P
DISS
T
J
T
STG
θ
JC
6A
36 V
80 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
2.2 C/W
O
1 = COLLECTOR
2 & 4 = EMITTER
3 = BASE
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CEO
BV
EBO
I
CBO
h
FE
C
OB
G
PE
η
C
I
C
= 100mA
I
C
= 50mA
I
E
= 10mA
V
CB
= 15 V
T
C
= 25
O
C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
18
36
4.0
5
UNITS
V
V
V
mA
---
V
CE
= 5.0 V
V
CB
= 12.5 V
V
CE
= 12.5 V
I
C
= 1.0 A
f = 1.0 MHz
P
OUT
= 40 W
f = 88 MHz
5
200
6.0
7.5
65
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
