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SD1219 参数 Datasheet PDF下载

SD1219图片预览
型号: SD1219
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅射频功率晶体管 [NPN SILICON RF POWER TRANSISTOR]
分类和应用: 晶体晶体管射频
文件页数/大小: 1 页 / 21 K
品牌: ASI [ ADVANCED SEMICONDUCTOR ]
   
SD1219
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
SD1219
is Designed for
12.5 V Collector Modulated AM Class C
Amplifier Service in the 118 to 136 MHz
Avionics Communication Band.
PACKAGE STYLE .380" 4L STUD
.112x45°
A
B
C
E
ØC
FEATURES:
P
G
= 8 dB Typical at 60 W/ 175 MHz
Guaranteed 13.5 and 28 V Performance
Omnirel™
Metallization System
E
B
H I
J
D
#8-32 UNC-2A
G
F
E
MAXIMUM RATINGS
I
C
V
CE
V
CB
P
DISS
T
J
T
STG
θ
JC
O
6.5 A
35 V
65 V
75 W @ T
C
= 25
O
C
-65 C to +200 C
-65
O
C to +150
O
C
2.3
O
C/W
O
DIM
A
B
C
D
E
F
G
H
I
J
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
ORDER CODE: ASI10733
CHARACTERISTICS
SYMBOL
BV
CES
BV
CEO
BV
EBO
I
CBO
h
FE
C
ob
P
G
I
C
= 200 mA
I
C
= 200 mA
I
E
= 10 mA
V
CB
= 30 V
V
CE
= 5.0 V
V
CB
= 30 V
T
C
= 25
O
C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
65
35
4.0
2.0
UNITS
V
V
V
mA
---
I
C
= 500 mA
f = 1.0 MHz
P
OUT
= 60 W
P
OUT
= 17.5 W
f = 150 MHz
f = 150 MHz
5.0
80
7.0
5.0
8.0
6.0
pF
dB
V
CE
= 28 V
V
CE
= 13.5 V
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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