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SD1441 参数 Datasheet PDF下载

SD1441图片预览
型号: SD1441
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅射频功率晶体管 [NPN SILICON RF POWER TRANSISTOR]
分类和应用: 晶体晶体管射频
文件页数/大小: 1 页 / 29 K
品牌: ASI [ ADVANCED SEMICONDUCTOR ]
   
SD1441
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI SD1441
is a12.5 V epitaxial silicon
NPN plannar transistor. Designed primarily for
VHF communication in the 175 MHz frequency.
PACKAGE STYLE .500 6L FLG
C
A
FEATURES:
175 MHz 12.5 V
P
G
= 5.0 dB at 150 W/175 MHz
Omnigold™
Metalization System
Common Emitter configuration
D
3
1
2x Ø N
FULL R
2
B
G
.725/18,42
F
E
4
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
CES
V
EBO
P
DISS
T
J
T
STG
θ
JC
22 A
36 V
18 V
36 V
4.0 V
350 W @ T
C
= 25 °C
-65 °C to +200 ° C
-65 °C to +150 °C
0.5 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
K
H
M IN IM UM
inches / m m
M
L
J
I
M AXIM U M
inches / m m
.150 / 3.43
.045 / 1.14
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
.125 / 3.18
.725 / 18.42
.970 / 24.64
.090 / 2.29
.150 / 3.81
.120 / 3.05
.160 / 4.06
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
1 = Collecttor 2 = Base 3&4 = Emitter
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CBO
h
FE
C
OB
P
G
η
C
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 100 mA
I
C
= 100 mA
I
E
= 5.0 mA
V
CB
= 15 V
V
CE
= 5.0 V
V
CB
= 12.5 V
V
CE
= 12.5 V
P
OUT
= 150 W
I
C
= 5.0 A
f = 1.0 MHz
f = 175 MHz
MINIMUM TYPICAL MAXIMUM
18
36
4.0
5.0
10
430
5.0
5.5
60
UNITS
V
V
V
mA
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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