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SD1444 参数 Datasheet PDF下载

SD1444图片预览
型号: SD1444
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅射频功率晶体管 [SILICON NPN RF POWER TRANSISTOR]
分类和应用: 晶体晶体管射频
文件页数/大小: 1 页 / 24 K
品牌: ASI [ ADVANCED SEMICONDUCTOR ]
   
SD1444
SILICON NPN RF POWER TRANSISTOR
DESCRIPTION:
The
ASI SD1444
is
designed for large signal power
amplifier applications operating in the
250-512 MHz range.
FEATURES:
Common Emitter
P
OUT
= 4.0 Watts
12.5 Volts
PACKAGE STYLE TO-39
MAXIMUM RATINGS:
I
C
V
CB
V
CE
P
DISS
T
J
T
STG
θ
JC
0.4 A
36 V
16 V
5.0 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
35.0 °C/W
1 = EMITTER
2 = BASE
3 = COLLECTOR
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CBO
H
FE
C
OB
G
PE
I
C
= 50 mA
I
C
= 50 mA
T
C
= 25 °C
TRANS1.SYM
TEST CONDITIONS
MINIMUM
16
36
4.0
TYPICAL
MAXIMUM
UNITS
V
V
V
I
C
= 1.0 mA
V
CE
= 15 V
V
CE
= 5.0 V
V
CB
= 15.0 V
I
C
= 50 mA
f = 1.0 MHz
P
OUT
= 2.0 W
f = 470 MHz
1.0
20
200
15
8.0
15
mA
---
pF
dB
V
CE
= 12.5 V
IMPEDANCE DATA
FREQ
470 MHz
P
OUT
= 2.0 W
V
CC
= 12.5 V
Z
IN
(Ω)
2.9 + j0.6
Z
CL
(Ω)
15.6 – j10.2
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. -
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