SD1476
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI SD1476
is a planar transistor
using diffused emitter ballasted
resistors for high linearity Class AB
operation in VHF and band 1 television
transmitters and transposers.
PACKAGE STYLE .450 BAL FLG(B)
A
.120 x 45°
B
FULL R
E D
C
M
FEATURES:
•
Common Emitter
•
P
G
= 12 dB at 240 W/88 MHz
•
Omnigold™
Metalization System
.208
F
.210
I
.050 NOM.
G
H
4X.060 R
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
25 A
70 V
40 V
4.0 V
430 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
0.4 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
.445 / 11.30
.120 / 3.25
.411 / 10.44
.825 / 20.96
.525 / 13.34
1.255 / 31.88
1.675 / 42.55
.002 / 0.05
.095 / 2.41
.115 / 2.92
MINIMUM
inches / mm
J K
L
MAXIMUM
inches / mm
.373 / 9.47
.205 / 5.21
.385 / 9.78
.130 / 3.30
.421 / 10.69
.865 / 21.97
.535 / 13.59
1.265 / 32.18
1.685 / 42.80
.006 / 0.15
.105 / 2.67
.135 / 3.43
.250 / 6.35
.457 / 11.61
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CEO
h
FE
C
OB
P
G
η
C
I
C
= 50 mA
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 100 mA
I
E
= 20 mA
V
CE
= 30 V
V
CE
= 5.0 V
V
CB
= 28 V
V
CE
= 32 V
I
C
= 2 X 400 mA
P
OUT
= 240 W
I
C
= 7.0 A
f = 1.0 MHz
f = 88 MHz
MINIMUM TYPICAL MAXIMUM
70
40
4.0
10
10
50
220
12
50
UNITS
V
V
V
mA
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
