SD1526-08
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI SD1526-08
is a Common
Base Device Designed for IFF, DME,
and Tacan Pulse Applications.
FEATURES INCLUDE:
•
Gold Metalization
•
Input Matching
•
Low Thermal Resistance
PACKAGE STYLE 250 2L FLG (A)
MAXIMUM RATINGS
I
C
V
CES
P
DISS
T
J
T
STG
θ
JC
1.0 A
45 V
21.9 W @ T
C
= 25 °C
-55 °C to +200 °C
-55 °C to +150 °C
8.0 °C/W
1 = COLLECTOR
2 = EMITTER
3 = BASE
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CEO
BV
CES
BV
EBO
I
CES
h
FE
P
G
T
C
= 25 °C
TEST CONDITIONS
I
C
= 1.0 mA
I
C
= 5.0 mA
I
C
= 5.0 mA
I
E
= 1.0 mA
V
CE
= 28 V
V
CE
= 5.0 V
V
CE
= 28 V
I
C
= 100 mA
f = 1025 to 1150 MHz
DUTY CYCLE
=1.0%
MINIMUM TYPICAL MAXIMUM
45
45
45
3.5
1.0
10
9.5
200
UNITS
V
V
V
V
mA
---
dB
P
out
= 5.0 W
PULSE WIDTH
=10
µS
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1