ASI SD1536-08
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI SD1536-08
is a Common
Base Device Designed for DME IFF,
and TACAN Pulse Applications.
PACKAGE STYLE .250 SQ 2L FL
1
3
FEATURES INCLUDE:
•
Gold Metallization
•
Internal Impedance Matching
•
Broad Band Performance
2
MAXIMUM RATINGS
I
C
V
CES
P
DISS
T
J
T
STG
θ
JC
10 A
65 V
292 W @ T
C
= 25 °C
-55 °C to +200 °C
-55 °C to +150 °C
0.60 °C/W
1 = COLLECTOR
2 = EMITTER
3 = BASE
CHARACTERISTICS
SYMBOL
BV
CER
BV
CBO
BV
EBO
I
CES
h
FE
P
OUT
G
P
I
C
= 25 Ma
I
C
= 10 mA
I
E
= 1.0 mA
V
CE
= 50 V
T
C
= 25°C
TEST CONDITIONS
R
BE
= 10
Ω
MINIMUM TYPICAL MAXIMUM
65
65
3.5
10
UNITS
V
V
V
mA
---
W
dB
V
CE
= 5.0 V
V
CE
= 50 V
I
C
= 100 mA
f = 1025 to 1150 MHz
DUTY CYCLE
= 1.0%
5.0
90
8.4
P
IN
= 13.5 W
PULSE WIDTH
= 10
μS
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
