SD1727
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI SD1727
is a Common
Emitter Device Designed for High
Linearity Class A/AB HF Applications.
PACKAGE STYLE .550 4L STUD
FEATURES INCLUDE:
•
Gold Metalization
•
Emitter Ballasting
MAXIMUM RATINGS
I
C
V
CB
P
DISS
T
J
T
STG
θ
JC
10 A
110 V
233 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
0.75
O
C/W
1 = COLLECTOR
3 = BASE
2 &4 =EMITTER
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
CBO
BV
EBO
I
CES
I
CEO
h
FE
C
ob
P
G
IMD
3
η
C
I
C
= 100 mA
I
C
= 100 mA
I
C
= 100 mA
I
E
= 10 mA
V
CE
= 60 V
V
CE
= 30 V
V
CE
= 6.0 V
V
CB
= 50 V
V
CE
= 50 V
T
C
= 25
O
C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
55
110
110
4.0
5.0
5.0
UNITS
V
V
V
V
mA
mA
---
pF
dB
dBc
%
REV. A
I
C
= 1.4 A
f = 1.0 MHz
15
50
220
14
Icq = 100 mA
P
out
= 150 W
(PEP)
f = 30 MHz
37
-37
45
-30
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
