SD1899
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI SD1899
is a Common Base
Device Designed for class C
Applications.
PACKAGE STYLE .250 2L FG
FEATURES INCLUDE:
•
Gold Metalization
•
Input/Output Matching
•
Diffused Ballast Resistors
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
P
DISS
T
J
T
STG
θ
JC
3.8 A
50 V
25 V
66 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
6.5 °C/W
1 = COLLECTOR
2 = EMITTER
3 = BASE
CHARACTERISTICS
SYMBOL
BV
CBO
BV
EBO
I
CEO
h
FE
C
OB
P
G
η
C
V
CC
= 28 V
I
C
= 25 mA
I
E
= 10 mA
V
CE
= 25 V
V
CE
= 8.0 V
T
C
= 25 °C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
50
3.5
25
UNITS
V
V
mA
---
pF
I
C
= 400 mA
f = 1.0 MHz
P
out
= 30 W
f = 1.6 – 1.7 GHz
20
60
24
100
7.0
40
8.2
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
