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SD1905 参数 Datasheet PDF下载

SD1905图片预览
型号: SD1905
PDF下载: 下载PDF文件 查看货源
内容描述: 高频/甚高频功率MOSFET N沟道增强模式 [HF/VHF POWER MOSFET N-Channel Enhancement Mode]
分类和应用: 晶体射频场效应晶体管放大器局域网
文件页数/大小: 1 页 / 18 K
品牌: ASI [ ADVANCED SEMICONDUCTOR ]
   
SD1905
HF/VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The
ASI SD1905
is Designed for
General Purpose Class-A,B Power
Amplifier Applications up to 200 MHz.
PACKAGE STYLE .380 4L FLG
B
.112 x 45°
A
FEATURES:
P
G
= 13 dB Typical at 200 MHz
Common Source Configuration
Omnigold™
Metalization System
F
S
D
S
C
D
E
Ø.125 NOM.
FULL R
J
.125
G
MAXIMUM RATINGS
I
D
V
(BR)DSS
V
DGR
V
GS
P
DISS
T
J
T
STG
θ
JC
8.4 A
65 V
65 V
±
20 V
117 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
1.5 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
.240 / 6.10
.004 / 0.10
.085 / 2.16
.160 / 4.06
MINIMUM
inches / mm
I
GH
MAXIMUM
inches / mm
.220 / 5.59
.785 / 19.94
.720 / 18.29
.970 / 24.64
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
NONE
CHARACTERISTICS
SYMBOL
BV
DSS
I
DSS
I
GSS
g
fs
C
iss
C
oss
C
rss
P
G
η
D
I
D
= 10 mA
V
DS
= 28 V
V
DS
= 0 V
I
D
= 10 A
T
C
= 25°C
TEST CONDITIONS
V
GS
= 0 V
V
GS
= 20 V
V
DS
= 10 V
MINIMUM
65
TYPICAL MAXIMUM
5.0
1.0
UNITS
V
mA
µ
A
mohs
.7
80
70
20
12
50
V
DS
= 28 V
V
DD
= 28 V
V
GS
= 0 V
I
DQ
= 25 mA
f = 1.0 MHz
P
out
= 45 W
f = 150 MHz
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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