SD4100
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI SD4100
is a gold mettalized
RF power transistor designed for high
linearity Class-AB operation in UHF
and band IV and V for TV transmitters.
It utilizes emitter ballasting for high
reliability and ruggedness.
PACKAGE STYLE .450 BAL FLG(A)
.060x45°
B
A
FULL R
.100x45°
1 1
C
D
F
E
3
P
3
2
G
H
J
M
L
N
FEATURES:
•
Common Emitter, Class AB push-pull
•
P
G
= 8.5 dB at 100 W/860 MHz
•
Omnigold™
Metalization System
•
28 V operations
K
2
DIM
A
MINIMUM
inches / mm
MAXIMUM
inches / mm
.055 / 1.40
.120 / 3.05
.455 / 11.56
.120 / 3.05
.230 / 5.84
.838 / 21.28
1.095 / 27.81
.525 / 13.34
.002 / 0.05
.055 / 1.40
.080 . 2.03
.850 / 21.59
1.105 / 28.07
.535 / 13.59
.005 / 0.15
.065 / 1.65
.095 / 2.41
.195 / 4.95
.445 / 11.30
.455 / 11.56
.130 / 3.30
.785 / 19.94
.465 / 11.81
.130 / 3.30
MAXIMUM RATINGS
I
C
V
CB
V
CE
P
DISS
T
J
T
STG
θ
JC
16 A
65 V
30 V
220 W @T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
0.8 °C/W
B
C
D
E
F
G
H
J
K
L
M
N
P
1 = COLLECTOR 2 = BASE 3 = EMITTER
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CER
BV
EBO
I
CES
h
FE
P
G
η
C
I
C
= 80 mA
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 120 mA
I
E
= 20 mA
V
E
= 28 V
V
CE
= 5.0 V
I
C
= 4.0 A
f = 860 MHz
R
BE
= 75
Ω
MINIMUM TYPICAL MAXIMUM
30
40
3.5
10
25
8.5
55
120
UNITS
V
V
V
mA
---
dB
V
CE
= 28 V
I
CQ
= 2 X 100 mA
P
REF
= 25 W
P
OUT
= 100 W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
