SRF4245
RF MOS FIELD EFFECT TRANSISTOR
DESCRIPTION:
The
SRF4245
is Designed for class
AB HF/VHF Aplications up to 200 MH
Z
FEATURES:
•
P
G
= 8 dB at 150 MHz
•
Omnigold™
Metallization System
PACKAGE STYLE .500 4L FLG
MAXIMUM RATINGS
I
D
V
(BR)DS
V
DGR
V
GS
P
DISS
T
J
T
STG
θ
JC
13.9 A
125 V
125 V
± 30 V
215 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +150 C
0.70 (Typ) C/W
O
O
O
O
O
O
CHARACTERISTICS
SYMBOL
V
(BR) DSS
I
DSS
I
GSS
V
FEDS(on)
G
FS
C
ISS
C
OSS
C
RSS
P
OUT
V
DS
= 50 V
V
DS
= 50 V
V
GS
= 0 V
V
DS
= 50 V
V
GS
= 20 V
V
GS
= 10 V
V
DS
= 10 V
T
C
= 25 C
O
TEST CONDITIONS
I
D
= 100 mA
V
GS
= 0 V
V
DS
= 0 V
I
D
= 10 A
I
D
= 5.0 A
MINIMUM TYPICAL MAXIMUM
125
5
1
5
4
500
UNITS
V
mA
µA
V
mhos
V
GS
= 0 V
F = 1.0 MHz
250
50
pF
I
DQ
= 250 mA
F = 150 MH
Z
P
G
150
8
W
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV 0
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
