TAN250A
RF POWER TRANSISTOR
DESCRIPTION:
The
ASI TAN250A
is a Common
Base Transistor Designed for DME,
TACAN and IFF Pulse Power Amplifier
Applications.
PACKAGE STYLE
FEATURES INCLUDE:
•
Gold Metallization
•
Hermetic Package
•
Input/Output Matching
MAXIMUM RATINGS
I
C
V
CB
P
DISS
T
J
T
STG
θ
JC
30 A
60 V
575 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +200
O
C
0.30
O
C/W
T
C
= 25
O
C
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CES
BV
EBO
I
CBO
h
FE
P
OUT
P
G
η
C
I
C
= 20 mA
I
C
= 25 mA
I
E
= 20 mA
V
CB
= 50 V
V
CE
= 5 V
TEST CONDITIONS
R
BE
= 10
Ω
MINIMUM TYPICAL MAXIMUM
60
60
4.0
12
UNITS
V
V
V
mA
---
W
dB
%
I
C
= 1.0 A
f = 960 to 1215 MHz
Duty Cycle = 5 %
20
250
6.0
120
V
CC
= 50 V
P
IN
= 13 W
Pulse Width = 20
µS
7.0
40
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
