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TP62601 参数 Datasheet PDF下载

TP62601图片预览
型号: TP62601
PDF下载: 下载PDF文件 查看货源
内容描述: NPN RF功率晶体管 [NPN RF POWER TRANSISTOR]
分类和应用: 晶体射频双极晶体管局域网
文件页数/大小: 1 页 / 24 K
品牌: ASI [ ADVANCED SEMICONDUCTOR ]
   
TP62601
NPN RF POWER TRANSISTOR
DESCRIPTION:
The
ASI TP62601
is a Common
Collector Device Designed for
Applications up to 3.0 GHz Band.
PACKAGE STYLE 230 2L FLG
FEATURES INCLUDE:
Hermetic Package
Gold Metallization
Emitter Ballasting
MAXIMUM RATINGS
I
C
V
CBO
P
DISS
T
J
T
STG
θ
JC
0.5 A
45 V
11.6 W @ T
C
= 25 °C
-55 °C to+200 °C
-55 °C to+200 °C
15 °C/W
1 = EMITTER
2 = COLLECTOR
3 = BASE
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
h
FE
C
OB
P
OUT
f
t
T
C
= 25 °C
TEST CONDITIONS
I
C
= 1.0 mA
I
C
= 20 mA
I
C
= 20 mA
I
E
= 250 µA
V
CB
= 28 V
V
CE
= 5.0 V
V
CB
= 28 V
V
CE
= 20 V
V
CE
= 20 V
I
E
= 220 mA
I
E
= 220 mA
I
C
= 100 mA
f = 1.0 MHz
f = 2.0 GHz
R
BE
= 10
MINIMUM TYPICAL MAXIMUM UNITS
45
50
22
3.5
125
20
120
5.0
1.25
2.7
V
V
V
V
µA
---
pF
W
GHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1