TPR175
NPN SILICON RF-MICROWAVE POWER
TRANSISTOR
DESCRIPTION:
The
ASI TPR175
is a common base
transistor Designed for pulsed systems
in the frequency band 1030-1090 MHz.
PACKAGE STYLE
FEATURES:
•
Common Base
•
Internal Matching Network
•
P
G
= 8.0 dB at 175 W/1090 MHz
•
Omnigold™
Metalization System
MAXIMUM RATINGS
I
C
V
CES
V
EBO
P
DISS
T
J
T
STG
θ
JC
12.5 A
55 V
3.5 V
388 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
0.45 °C/W
1 = Collector 2 = Base 3 = Emitter
CHARACTERISTICS
SYMBOL
BV
CES
BV
EBO
h
FE
P
G
VSRW
η
C
I
C
= 20 mA
I
E
= 5.0 mA
V
CE
= 5.0 V
V
CE
= 50 V
T
C
= 25
°
C
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
55
3.5
UNITS
V
V
---
I
C
= 20 mA
P
OUT
= 175 W
f = 1090 MHz
10
8.0
9.0
00:1
40
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
