TPV376
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI TPV376
is a Common
Emitter Device Designed for High
Linearity Class A Television Band III
(170-230 MHz) Applications.
PACKAGE STYLE .550 4L STUD(1/4)
FEATURES INCLUDE:
•
Gold Metalization
•
Emitter Ballasting
MAXIMUM RATINGS
I
C
V
CB
P
DISS
T
J
T
STG
θ
JC
16 A
60 V
150 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
1.2
O
C/W
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CER
BV
CBO
BV
EBO
h
FE
C
ob
P
out
ψ
I
C
= 100 mA
I
C
= 100 mA
I
C
= 100 mA
I
E
= 20 mA
V
CE
= 5.0 V
V
CB
= 30 V
V
CE
= 28 V
T
C
= 25
O
C
TEST CONDITIONS
R
BE
= 10
Ω
MINIMUM TYPICAL MAXIMUM
30
60
60
4.0
UNITS
V
V
V
V
I
C
= 1.0 A
f = 1.0 MHz
I
C
= 3.5 A
I
E
= 3.5 A
f = 225 MHz
P
REF
=20 W
f = 225 MHz
10
120
150
---
pF
W
20
NO DEGRADATION IN OUTPUT POWER
V
CE
= 28 V
LOAD
VSWR =
∞:1
Pref = 30 W
IMD
1
SOUND CARRIER
= -7.0 dB
VISION CARRIER
= -8.0 dB
SIDEBAND SIG
. = -16 dB
-53
dB
V
CE
= 28 V
I
E
= 3.5 A
f = 225 MHz
REV. A
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
