TPV387
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
TPV387
is Designed for
Operation in Band III TV Transposers
and Transmitter Amplifiers from
170 to 230 MHz.
PACKAGE STYLE 500 6L FLG
FEATURES INCLUDE:
•
Gold Metalization
•
Emitter Ballast Resistors
•
Internal Input Matching
Common Emitter
•
MAXIMUM RATINGS
I
C
V
CE
T
J
T
STG
θ
JC
16 A
(CONT)
35 V
-65
O
C to +200
O
C
-65
O
C to +200
O
C
1.0
O
C/W
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CER
BV
CBO
BV
EBO
h
FE
C
ob
G
PE
ψ
I
C
= 100 mA
I
C
= 100 mA
I
C
= 50 mA
I
E
= 20 mA
V
CE
= 5.0 V
V
CB
= 30 V
V
CC
= 28 V
V
CC
= 28 V
P
out
= 24 W
V
CE
= 28 V
IMD
1
P
o1dB
T
C
= 25
O
C
NONETEST
CONDITIONS
R
BE
= 10
Ω
MINIMUM TYPICAL MAXIMUM
35
60
65
4.0
UNITS
V
V
V
V
I
C
= 1.0 A
f = 1.0 MHz
P
out
= 24 W
ALL PHASEANGLES
LOAD
VSWR =
∝:1
20
130
13
100
150
---
pF
dB
f = 225 MHz
f = 225 MHz
NO DEGRADATION IN OUTPUT POWER
Pref = 24 W
f = 225 MHz
VISION CARRIER
= -8 dB
SOUND CARRIER
= -7 dB
SIDEBAND SIGNAL
= -16 dB
I
E
= 3.5 A
V
CC
= 28 V
I
Q
= 200 mA
f = 225 MHz
90
-50
dB
W
REV. A
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
