TPV590
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
TPV590
is a Common Emitter
Device Designed for Class A High
Linearity Amplifier Applications in TV
Band IV-V Transmitters.
PACKAGE STYLE 205 4L STUD
FEATURES INCLUDE:
•
Gold Metallization
•
Emitter Ballasting
•
High Gain
MAXIMUM RATINGS
I
C
V
CBO
P
DISS
T
J
T
STG
θ
JC
300 mA
45 V
5.3 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
Cto +200
O
C
33
O
C/W
T
C
= 25
O
C
1 = COLLECTOR
2 & 4 = EMITTER
3 = BASE
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CER
BV
EBO
h
FE
C
OB
P
G
V
CE
= 20 V
IMD
3
I
C
= 1.0mA
I
C
= 10 mA
I
E
= 1.0 mA
V
CE
= 5 V
V
CB
= 28 V
V
CE
= 20 V
TEST CONDITIONS
R
BE
= 10
Ω
MINIMUM TYPICAL MAXIMUM
45
45
3.5
UNITS
V
V
V
---
I
C
= 100 mA
f = 1.0 MHz
I
C
= 150 mA
I
C
= 150 mA
P
OUT
= 0.5 W
f = 860 MHz
Pref = 0.5 W
20
2.0
13
14
3.0
pF
dB
Vision = -8dB
Chroma = -16dB Sound =-10 dB
-58
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
