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TPV597 参数 Datasheet PDF下载

TPV597图片预览
型号: TPV597
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅射频功率晶体管 [NPN SILICON RF POWER TRANSISTOR]
分类和应用: 晶体射频双极晶体管放大器
文件页数/大小: 1 页 / 18 K
品牌: ASI [ ADVANCED SEMICONDUCTOR ]
   
TPV597
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI TPV597
is designed for 1.0
W stage in Band V TV transposes
amplifiers up to 860 MHz.
FEATURES:
Common Emitter, 20 V operation
P
G
= 10.5 dB at 1.0 W/860 MHz
Omnigold™
Metalization System
Emitter Ballasting
PACKAGE STYLE .280 4L STUD
A
45°
C
B
E
B
D
C
E
J
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
1.4 A
45 V
24 V
3.5 V
19 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
9.0 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
K
F
E
I
G
H
K
MINIMUM
inches / mm
#8-32 UNC
MAXIMUM
inches / mm
1.010 / 25.65
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
.572 / 14.53
.130 / 3.30
.245 / 6.22
.640 / 16.26
.175 / 4.45
.275 / 6.99
1.055 / 26.80
.230 /5.84
.285 / 7.24
.007 / 0.18
.137 / 3.48
.255 / 6.48
.217 / 5.51
.285 / 7.24
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
h
FE
C
OB
P
G
IMD
1
I
C
= 40 mA
I
C
= 40 mA
I
E
= 0.5 mA
V
CB
= 30 V
V
CE
= 5.0 V
V
CB
= 28 V
T
C
= 25
°
C
NONETEST
CONDITIONS
I
C
= 2.0 mA
R
BE
= 10
MINIMUM TYPICAL MAXIMUM
45
50
24
3.5
1.2
UNITS
V
V
V
V
mA
---
pF
dB
dB
I
C
= 200 mA
f = 1.0 MHz
I
E
= 440 mA
P
OUT
= 1.0 W
15
120
7.0
V
CE
= 20 V
f = 860 MHz
10.5
11
-60
-58
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1