TPV595
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
TPV595
is Designed for Class AB
Push Pull, Common Emitter from 470
to 860 MHz Applications.
PACKAGE STYLE .250 BAL FLG
.020 x 45°
B
A
Collector - 2 places
Ø .130 N O M .
.05 0 x 45°
E
D
C
N
FEATURES:
•
Gold Metalization
Emitter connected to flange
F
H
I
J
K
L
M
G
Base - 2 places
•
Emitter Ballast Resistors
•
Internal Input Matching
D IM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
M IN IM U M
inches / m m
M A X IM U M
inches / m m
MAXIMUM RATINGS
I
C
V
CB
P
DISS
T
J
T
STG
θ
JC
2 x 2.6 A
45 V
65 W @ T
C
= 25
O
C
-50
O
C to +200
O
C
-50
O
C to +200
O
C
2.5
O
C/W
.0 60 / 1 .52
.055 / 1.40
.125 / 3.18
.243 / 6.17
.630 / 16.00
.092 / 2.34
.555 / 14.10
.739 / 18.77
.315 / 8.00
.002 / 0.05
.055 / 1.40
.075 1.91
.24 5 / 6 .22
.565 / 14.35
.750 / 19.05
.3 27 / 8.31
.006 / 0.15
.065 / 1.65
.0 95 / 2.41
.190 / 4.83
.257 / 6.53
.255 / 6.48
.670 / 17.01
.065 / 1.65
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CER
BV
CBO
I
CBO
BV
EBO
h
FE
C
OB
P
G
IMD
3
I
C
= 40 mA
I
C
= 20 mA
I
C
= 20 mA
V
CB
= 20 V
I
E
= 5 mA
V
CE
= 20 V
V
CB
= 25 V
T
C
= 25 C
O
NONETEST
CONDITIONS
R
BE
= 51
Ω
MINIMUM TYPICAL MAXIMUM
25
40
45
5.0
3.0
28
UNITS
V
V
V
mA
V
--
I
C
= 500 mA
10
20
pF
dB
V
CE
= 25 V
F = 860 MHz
Vision = -8 dB
I
C
= 2 x 900 mA
Sound = -7 dB
P
REF
= 14 W
SB = -16 dB
8.5
9.5
-47
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
