TPV8100B
TPV8100B
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI TPV8100B
is Designed for
Transmitter Output Stages Covering
TV Band IV and V, Operating at 28 V.
FEATURES INCLUDE:
•
Internal Input, Output Matching
•
Common Emitter Configuration
•
Gold Metalization
•
Emitter Ballasting
PACKAGE STYLE .438X.450 4LFL
MAXIMUM RATINGS
I
C
V
CER
P
DISS
T
J
T
STG
θ
JC
12 A
40 V R
BE
= 10
Ω
215 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +150 C
0.8 C/W
O
O
O
O
O
O
1 = COLLECTOR #1
2 = COLLECTOR
#2
3 = BASE #1
4 = BASE #2
5 = EMITTER CASE (COMMON)
CHARACTERISTICS
SYMBOL
BV
CER
BV
CBO
BV
EBO
I
CER
h
FE
G
p
η
P
out
I
C
= 10 mA
I
C
= 20 mA
I
E
= 10 mA
V
CE
= 28 V
V
CE
= 10 V
V
CE
= 28 V
V
CE
= 28 V
T
C
= 25 C
O
TEST CONDITIONS
R
BE
= 75
Ω
MINIMUM TYPICAL MAXIMUM
30
65
4.0
UNITS
V
V
V
R
BE
= 75
Ω
I
C
= 2.0 A
I
cq
= 2X50 mA
I
cq
= 2X50 mA
f = 860 MHz
f = 860 MHz
f = 860 MHz
30
8.5
55
100
10
120
mA
---
dB
%
W
I
cq
= 2X50 mA
V
CE
= 28 V
1.0 dB
COMPRESSION
(ref = 25 W)
V
CE
= 28 V
V
CE
= 32 V
I
cq
= 2X50 mA
I
cq
= 2X25 mA
FUNCTIONAL TESTS IN VIDEO (STANDARD BLACK LEVEL)
P
out
P
out
f = 860 MHz
f = 860 MHz
125
150
W
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
