TRW53601
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI TRW53601
is Designed for
General Purpose Oscillator
Applications up to 2.3 GHz.
PACKAGE STYLE
FEATURES:
•
Diffused Ballast Resistors
•
Omnigold™
Metalization System
•
Common Emitter
MAXIMUM RATINGS
I
C
V
CES
P
DISS
T
J
T
STG
θ
JC
400 mA
50 V
3.0 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
31 °C/W
1 = COLLECTOR
2 = EMITTER
3 = BASE
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
CBO
BV
EBO
I
CBO
h
FE
C
OB
P
O
IMD
G
P
VSWR
I
C
= 10 mA
I
C
= 10 mA
T
C
= 25 °C
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
20
50
45
3.5
0.25
UNITS
V
V
V
V
mA
---
pF
W
dB
dB
I
C
= 1.0 mA
I
E
= 250 µA
V
CB
= 28 V
V
CE
= 5.0 V
V
CB
= 28 V
V
CE
= 20 V
P
IN
= .100 W
I
E
= 120 mA
I
C
= 100 mA
f = 1.0 MHz
f = 2.0 GHz
15
120
3.5
.8
-30
8.5
∞
9.5
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
