TVU150
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI TVU150
is Designed for
Television Band IV & V Applications
up to 860 MHz.
PACKAGE STYLE .400 BAL FLG(D)
.080x45°
A
B
FULL R
(4X).060 R
E
.1925
D
M
C
FEATURES:
•
Common Emitter
•
P
G
= 10 dB at 150 W/860 MHz
•
Omnigold™
Metalization System
F
G
H
I
N
L
J
K
MINIMUM
inches / mm
MAXIMUM RATINGS
I
C
V
CEO
V
CES
V
EBO
P
DISS
T
J
T
STG
θ
JC
25 A
28 V
60 V
3.5 V
300 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
0.55 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
MAXIMUM
inches / mm
.220 / 5.59
.210 / 5.33
.125 / 3.18
.380 / 9.65
.580 / 14.73
.435 / 11.05
1.090 / 27.69
1.335 / 33.91
.003 / 0.08
.060 / 1.52
.100 / 2.54
.395 / 10.03
.850 / 21.59
.230 / 5.84
.390 / 9.91
.620 / 15.75
1.105 / 28.07
1.345 / 34.16
.007 / 0.18
.070 / 1.78
.115 / 2.92
.230 / 5.84
.407 / 10.34
.870 / 22.10
ORDER CODE: ASI10652
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CER
BV
CES
BV
EBO
I
CES
h
FE
C
OB
P
G
IMD
1
Load
Mismatch
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 100 mA
I
C
= 100 mA
I
C
= 50 mA
I
E
= 10 mA
V
CE
= 30 V
V
CE
= 5.0 V
V
CB
= 26 V
V
CC
= 26 V
P
OUT
= 40 W
I
CQ
= 2 X 3000 mA
I
C
= 1.0 A
f = 1.0 MHz
f = 860 MHz
R
BE
= 200
Ω
MINIMUM TYPICAL MAXIMUM
26
35
60
3.5
30
30
40
80
4.0
10
45
75
11
-52
9.0
No Degradation in Output
Power
120
UNITS
V
V
V
V
mA
---
pF
dB
dBc
V
CC
= 26 V I
CQ
= 2 X 150 mA P
OUT
= 150 W
PEP
VSWR = 5:1 @ all phase angles
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
1/3
ASI [ ADVANCED SEMICONDUCTOR ]
