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TVV005 参数 Datasheet PDF下载

TVV005图片预览
型号: TVV005
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅射频功率晶体管 [NPN SILICON RF POWER TRANSISTOR]
分类和应用: 晶体晶体管射频
文件页数/大小: 1 页 / 23 K
品牌: ASI [ ADVANCED SEMICONDUCTOR ]
   
TVV005
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI TVV005
is Designed for
PACKAGE STYLE .280 4L STUD
A
45°
FEATURES:
Omnigold™
Metalization System
B
D
S
G
D
C
J
E
I
S
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
O
F
G
4.0 A
55 V
30 V
4.0 V
50 W @ T
C
= 25
O
C
-65 C to +200 C
-65
O
C to +200
O
C
3.5
O
C/W
O
DIM
A
B
C
D
E
F
G
H
I
J
K
.175 / 4.45
.275 / 6.99
.245 / 6.22
MINIMUM
inches / mm
H
K
#8-32 UNC
MAXIMUM
inches / mm
1.010 / 25.65
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
.572 / 14.53
.130 / 3.30
1.055 / 26.80
.230 /5.84
.285 / 7.24
.007 / 0.18
.137 / 3.48
.255 / 6.48
.640 / 16.26
.217 / 5.51
.285 / 7.24
ORDER CODE: ASI10654
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CER
BV
CBO
BV
EBO
h
FE
C
OB
P
G
IMD
1
ψ
I
C
= 50 mA
I
C
= 20 mA
I
C
= 20 mA
T
C
= 25 C
O
NONETEST
CONDITIONS
R
BE
= 10
MINIMUM TYPICAL MAXIMUM
30
55
55
4.0
UNITS
V
V
V
V
I
E
= 2.0 mA
V
CE
= 5.0 V
V
CB
= 28 V
V
CE
= 28 V P
OUT
= 5.0 W I
C
= 1.0 A
I
C
= 100 mA
f = 1.0 MHz
f = 225 MHz
10
---
35
---
pF
dB
dBc
15
-55
No Degradation in
Output Power
V
CE
= 28 V P
OUT
= 5.0 W I
C
= 1.0 A f = 225 MHz
Vision Carrier = -8 dB ref. Sound Carrier = -7 dB ref.
Sideband Signal = -16 dB ref.
V
CE
= 28 V P
OUT
= 5.0 W I
C
= 1.0 A
Load VSWR =
00
:1, All Phase Angles
f = 225 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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