TVV020
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI TVV020
is Designed for
PACKAGE STYLE .500 4L STUD
45°
A
D
FEATURES:
•
•
•
Omnigold™
Metalization System
B
ØC
D
E
S
G
S
J
I
SEATING
PLANE
MAXIMUM RATINGS
I
C
V
CEO
V
CES
V
EBO
P
DISS
T
J
T
STG
θ
JC
O
F
8.0 A
35 V
60 V
4.0 V
140 W @ T
C
= 25
O
C
-65 C to +200 C
-65
O
C to +150
O
C
1.5 C/W
O
O
DIM
A
B
C
D
E
F
G
H
I
J
G
H
#10-32 UNF
MINIMUM
inches / mm
MAXIMUM
inches / mm
1.010 / 25.65
.220 / 5.59
.495 / 12.57
.003 / 0.08
.160 / 4.06
.622 / 15.80
.100 / 2.54
.415 / 10.54
.720 / 18.29
.250 / 6.35
1.050 / 26.67
.230 / 5.84
.505 / 12.83
.007 / 0.18
.180 / 4.57
.130 / 3.31
.425 / 10.80
.290 / 7.37
ORDER CODE: ASI10659
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CES
h
FE
C
OB
P
G
IMD
3
I
C
= 50 mA
I
C
= 50 mA
I
C
= 50 mA
I
E
= 10 mA
V
CB
= 50 V
T
C
= 25 C
O
NONETEST
CONDITIONS
R
BE
= 10
Ω
MINIMUM TYPICAL MAXIMUM
65
60
35
4.0
5.0
UNITS
V
V
V
V
mA
---
pF
dB
dBc
V
CE
= 5.0 V
V
CB
= 30 V
V
CE
= 25 V
P
OUT
= 14 W
I
C
= 1.0 A
f = 1.0 MHz
I
C
= 2.5 A
f = 225 MHz
20
120
85
8.0
-51
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
