TVV030A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI TVV030A
is Designed for
.112 x 45°
A
Ø .630 NOM
PACKAGE STYLE .500 4L STUD(A)
FEATURES:
•
•
•
Omnigold™
Metalization System
B C
E
C
E
B
E
D
G
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
16 A
60 V
30 V
4.0 V
150 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
1.2
O
C/W
DIM
A
B
C
D
E
F
G
H
1/4-28 UNF-2A
F
H
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.545 / 13.84
.495 / 12.57
.003 / 0.08
.185 / 4.70
.497 / 12.62
.230 / 5.84
1.050 / 26.67
.555 / 14.10
.505 / 12.83
.007 / 0.18
.830 / 21.08
.198 / 5.03
.530 / 13.46
ORDER CODE: ASI10661
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CER
BV
CEO
BV
EBO
h
FE
C
OB
P
G
IMD
1
T
C
= 25 C
O
NONETEST
CONDITIONS
I
C
= 100 mA
I
C
= 100 mA
I
C
= 100 mA
I
E
= 10 mA
V
CE
= 5.0 V
V
CB
= 30 V
V
CE
= 28 V
P
OUT
= 30 W
I
C
= 3.5 A
I
C
= 1.0 A
f = 1.0 MHz
f = 225 MHz
R
BE
= 10
Ω
MINIMUM TYPICAL MAXIMUM
60
60
30
4.0
10
120
150
7.5
-53
UNITS
V
V
V
V
---
pF
dB
dBC
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
