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TVV030 参数 Datasheet PDF下载

TVV030图片预览
型号: TVV030
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅射频功率晶体管 [NPN SILICON RF POWER TRANSISTOR]
分类和应用: 晶体晶体管射频
文件页数/大小: 1 页 / 21 K
品牌: ASI [ ADVANCED SEMICONDUCTOR ]
   
TVV030
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI TVV030
is Designed for
PACKAGE STYLE .500 6L FLG
C
A
2x ØN
FULL R
D
FEATURES:
Omnigold™
Metalization System
B
G
.725/18,42
F
E
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
O
K
H
DIM
A
MINIMUM
inches / mm
M
L
J
I
16 A
60 V
30 V
4.0 V
150 W @ T
C
= 25 C
-65 C to +200 C
-65
O
C to +150
O
C
1.2
O
C/W
O
O
MAXIMUM
inches / mm
.150 / 3.43
.045 / 1.14
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
.125 / 3.18
.725 / 18.42
.970 / 24.64
.090 / 2.29
.150 / 3.81
.160 / 4.06
B
C
D
E
F
G
H
I
J
K
L
M
N
.120 / 3.05
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
ORDER CODE: ASI10660
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CES
h
FE
C
OB
P
G
IMD
1
T
C
= 25 C
O
NONETEST
CONDITIONS
I
C
= 100 mA
I
C
= 100 mA
I
C
= 100 mA
I
E
= 10 mA
V
CB
= 50 V
V
CE
= 5.0 V
V
CB
= 30 V
V
CE
= 28 V
P
OUT
= 30 W
I
C
= 3.5 A
I
C
= 1.0 A
f = 1.0 MHz
f = 225 MHz
R
BE
= 10
MINIMUM TYPICAL MAXIMUM
60
60
30
4.0
5.0
10
120
150
7.5
-53
UNITS
V
V
V
V
mA
---
pF
dB
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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