TVV100
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI TVV100
is Designed for
Television Band III Applications up
to 225 MHz.
PACKAGE STYLE .400 8L FLG
C
D
B
A
F U LL R
G
FEATURES:
•
Common Emitter
•
P
G
= 11 dB at 100 W/225 MHz
•
Omnigold™
Metalization System
F
E
.19 25
.125
K
O
H
4 x .0 60 R
I
J
N
L M
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
O
O
16 A
65 V
33 V
3.5 V
150 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +150 C
0.8 C/W
O
O
O
O
D IM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
M IN IM UM
inche s / m m
M A X IM U M
inche s / m m
.030 / 0.76
.115 / 2.92
.360 / 9.14
.065 / 1.65
.130 / 3.30
.380 / 9.65
.735 / 18 .6 7
.645 / 16 .3 8
.895 / 22 .7 3
.420 / 10 .6 7
.003 / 0.08
.120 / 3.05
.159 / 4.04
.395 / 10 .0 3
.390 / 9.91
.765 / 19 .4 3
.655 / 16 .6 4
.905 / 22 .9 9
.430 / 10 .9 2
.007 / 0.18
.130 / 3.30
.175 / 4.45
.280 / 7.11
.405 / 10 .2 9
.075 / 1.91
.125 / 3.18
ORDER CODE: ASI10662
O
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CER
BV
CEO
BV
EBO
h
FE
C
OB
P
G
I
C
= 50 mA
I
C
= 50 mA
I
C
= 50 mA
I
E
= 5.0 mA
V
CE
= 5.0 V
V
CB
= 28 V
T
C
= 25 C
NONETEST
CONDITIONS
R
BE
= 15
Ω
MINIMUM TYPICAL MAXIMUM
65
60
33
3.5
UNITS
V
V
V
V
I
C
= 500 mA
f = 1.0 MHz
I
C
= 2 X 100 mA
f = 225 MHz
20
---
11
60
150
---
---
pF
dB
V
CE
= 28 V
P
OUT
= 100 W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
