ULBM0.5
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI ULBM0.5
is Designed for
PACKAGE STYLE .205 4L PILL
D
FEATURES:
•
•
•
Omnigold™
Metalization System
B
A
C
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
O
F
0.4 A
28 V
12 V
4.0 V
2.5 W @ T
C
= 25 C
-65 C to +200 C
-65
O
C to +150
O
C
70
O
C/W
O
O
DIM
A
B
C
D
E
F
G
H
G
H
E
MINIMUM
inches / mm
MAXIMUM
inches / mm
.976 / 24.800
.976 / 24.800
.028 / 0.700
.138 / 3.500
.106 / 2.700
.039 / 1.000
.004 / 0.100
.200 / 5.100
1.00 / 25.400
1.00 / 25.400
.031 / 0.800
.139 / 3.400
.047 / 1.200
.006 / 0.150
.208 / 5.300
ORDER CODE: ASI10674
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
h
FE
C
ob
P
G
I
C
= 25 mA
I
C
= 10 mA
T
C
= 25 C
O
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
12
28
4.0
UNITS
V
V
V
I
E
= 5.0 mA
V
CE
= 5.0 V
V
CB
= 12.5 V
V
CC
= 12.5 V
P
OUT
= 0.5 W
I
C
= 150 mA
f = 1.0 MHz
f = 470 MHz
20
---
4.0
---
pF
dB
13
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
