ULBM2SL
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI ULBM2SL
is Designed for
PACKAGE STYLE .280 4L PILL
A
FEATURES:
•
•
•
Omnigold™
Metalization System
ØB
MAXIMUM RATINGS
ØC
I
C
V
CBO
V
CER
V
CES
V
EBO
P
DISS
T
J
T
STG
θ
JC
O
0.75 A
36 V
16 V
36 V
4.0 V
5.0 W @ T
C
= 25
O
C
-65 C to +200 C
-65
O
C to +150
O
C
35.0
O
C/W
O
DIM
A
B
C
D
E
F
.275 / 6.99
.004 / 0.10
.050 / 1.27
.118 / 3.00
MINIMUM
inches / mm
D
E
F
MAXIMUM
inches / mm
.220 / 5.59
.230 / 5.84
1.055 / 26.80
.285 / 7.24
.006 / 0.15
.060 . 1.52
.130 / 3.30
ORDER CODE: ASI10678
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CBO
I
CER
h
FE
C
ob
P
G
η
C
I
C
= 5 mA
I
E
= 1 mA
V
CB
= 15 V
V
CE
= 10 V
I
C
= 25 mA
T
C
= 25 C
O
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
16
36
4.0
1.0
UNITS
V
V
V
mA
mA
---
pF
dB
R
BE
= 80
Ω
I
C
= 100 mA
f = 1.0 MHz
P
OUT
= 2.0 W
f = 470 MHz
11.5
60
40
0.5
200
10
V
CE
= 5.0 V
V
CB
= 7.5 V
V
CC
= 12.5 V
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
