ULBM5
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI ULBM5
is Designed for
PACKAGE STYLE .280 4L STUD
FEATURES:
•
•
•
Omnigold™
Metalization System
45°
B
A
MAXIMUM RATINGS
I
C
V
CBO
V
CER
V
CES
V
EBO
P
DISS
T
J
T
STG
θ
JC
2.0 A
36 V
18 V
36 V
4.0 V
37 W @ T
C
= 25 C
-65
O
C to +200
O
C
-65 C to +150 C
11.6
O
C/W
O
O
O
DIM
A
B
C
D
E
F
G
H
I
J
K
.175 / 4.45
.275 / 6.99
.245 / 6.22
MINIMUM
inches / mm
D
C
J
E
F
G
H
K
I
#8-32 UNC
MAXIMUM
inches / mm
1.010 / 25.65
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
.572 / 14.53
.130 / 3.30
1.055 / 26.80
.230 /5.84
.285 / 7.24
.007 / 0.18
.137 / 3.48
.255 / 6.48
.640 / 16.26
.217 / 5.51
.285 / 7.24
ORDER CODE: ASI10680
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CBO
h
FE
C
ob
P
G
I
C
= 50 mA
I
C
= 10 mA
T
C
= 25 C
O
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
16
36
4.0
1.0
UNITS
V
V
V
mA
---
pF
dB
I
E
= 2.0 mA
V
CB
= 15 V
V
CE
= 5.0 V
V
CB
= 12 V
V
CC
= 12.5 V
P
IN
= 0.70 W
I
C
= 200 mA
f = 1.0 MHz
f = 470 MHz
20
---
---
19
---
---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
