UML10
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
UML10
is Designed for
PACKAGE STYLE .280 4L STUD
A
45°
FEATURES:
•
•
•
Omnigold™
Metalization System
B
D
C
J
E
I
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
O
O
F
G
H
K
DIM
A
B
C
D
E
F
G
H
I
J
.175 / 4.45
.275 / 6.99
K
.245 / 6.22
.640 / 16.26
.217 / 5.51
.285 / 7.24
MINIMUM
inches / mm
1.1 A
60 V
33 V
4.0 V
27 W @ T
C
= 25
O
C
-65 C to +200 C
-65 C to +150 C
8.0
O
C/W
O
O
1.010 / 25.65
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
#8-32 UNC
MAXIMUM
inches / mm
1.055 / 26.80
.230 /5.84
.285 / 7.24
.007 / 0.18
.137 / 3.48
.572 / 14.53
.130 / 3.30
.255 / 6.48
ORDER CODE: ASI10694
CHARACTERISTICS
SYMBOL
BV
EBO
BV
CES
I
CBO
h
FE
C
OB
P
G
η
D
I
E
= 20 mA
I
C
= 20 mA
V
CB
= 30 V
T
C
= 25 C
O
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
4.0
33
1.0
UNITS
V
V
mA
---
pF
dB
%
V
CE
= 5.0 V
V
CB
= 28 V
V
CC
= 28 V
I
C
= 0.5 A
f = 860 MHz
P
OUT
= 10 W
f = 400 MHz
25
80
15
10
60
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
