UTV005
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI UTV005
is Designed for
Class A, UHF Television – Band IV
and V Applications up to 860 MHz.
PACKAGE STYLE .280 4L STUD
A
45°
FEATURES:
•
Common Emitter
•
P
G
= 11 dB at 0.5 W/470-860 MHz
•
Omnigold™
Metalization System
B
C
E
B
D
C
J
E
MAXIMUM RATINGS
I
C
V
CEO
V
CES
V
EBO
P
DISS
T
J
T
STG
θ
JC
0.75 A
24 V
45 V
3.5 V
8.0 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
22 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
K
E
F
G
H
K
MINIMUM
inches / mm
I
#8-32 UNC
MAXIMUM
inches / mm
1.010 / 25.65
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
.572 / 14.53
.130 / 3.30
.245 / 6.22
.640 / 16.26
.175 / 4.45
.275 / 6.99
1.055 / 26.80
.230 /5.84
.285 / 7.24
.007 / 0.18
.137 / 3.48
.255 / 6.48
.217 / 5.51
.285 / 7.24
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
h
FE
C
ob
P
G
3
IMD
VSWR
1
I
C
= 20 mA
I
C
= 10 mA
I
E
= 1.0 mA
V
CE
= 5.0 V
V
CB
= 20 V
T
C
= 25 °C
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
24
45
3.5
UNITS
V
V
V
I
C
= 100 mA
f = 1.0 MHz
I
C
= 220 mA
20
---
5.0
11
-60
---
---
pF
dB
dB
---
V
CC
= 20 V
P
OUT
= 0.5 W
f = 470-860 MHz
30:1
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
