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VFT15-28 参数 Datasheet PDF下载

VFT15-28图片预览
型号: VFT15-28
PDF下载: 下载PDF文件 查看货源
内容描述: 甚高频功率MOSFET N沟道增强模式 [VHF POWER MOSFET N-Channel Enhancement Mode]
分类和应用:
文件页数/大小: 2 页 / 27 K
品牌: ASI [ ADVANCED SEMICONDUCTOR ]
 浏览型号VFT15-28的Datasheet PDF文件第2页  
VFT15-28
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The
VFT15-28
is Designed for
General Purpose Class B Power
Amplifier Applications up to 175 MHz.
PACKAGE STYLE .380 4L FLG
.112 x 45°
A
FEATURES:
P
G
= 14 dB Typ. at 15 W /175MHz
10:1 Load VSWR
Capability
Omnigold™
Metalization System
B
S
G
C
D
F
E
D
S
Ø.125 NOM.
FULL R
J
.125
MAXIMUM RATINGS
I
D
V
(BR)DSS
V
DGR
V
GS
P
DISS
T
J
T
STG
θ
JC
O
O
I
GH
2.5 A
65 V
65 V
± 40 V
55 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +150 C
3.2
O
C/W
O
O
O
DIM
A
B
C
D
E
F
G
H
I
J
.240 / 6.10
.004 / 0.10
.085 / 2.16
.160 / 4.06
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.785 / 19.94
.720 / 18.29
.970 / 24.64
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
ORDER CODE: ASI10702
CHARACTERISTICS
SYMBOL
V
(BR)DSS
I
DSS
I
GSS
V
GS
G
FS
C
iss
C
oss
C
rss
P
G
η
D
V
GS
= 0 V
V
DS
= 28 V
V
DS
= 0 V
V
DS
= 10 V
V
DS
= 10 V
T
C
= 25
O
C
NONETEST
CONDITIONS
I
DS
= 5.0 mA
V
GS
= 0 V
V
GS
= 40 V
I
D
= 25 mA
I
D
= 250 mA
MINIMUM TYPICAL MAXIMUM
60
---
---
1.0
250
---
---
---
---
---
22
17
3.0
13
50
14
60
---
2.0
1.0
6.0
---
UNITS
V
mA
µ
A
V
mS
V
GS
= 28 V
V
DS
= 0 V
F = 1.0 MHz
pF
V
DD
= 28 V
F = 175 MHz
I
DQ
= 25 mA
P
OUT
= 15 W
dB
%
REV. A
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
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