VFT30-50
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The
VFT30-50
is Designed for
General Purpose Class B Power
Amplifier Applications up to 250 MHz.
PACKAGE STYLE .380 4L FLG
B
.112 x 45°
A
FEATURES:
•
P
G
= 16 dB Typ. at 30 W /175 MHz
•
η
D
=
60% Typ. at 30 W /175 MHz
•
Omnigold™
Metalization System
F
S
G
C
D
E
D
S
Ø.125 NOM.
FULL R
J
.125
MAXIMUM RATINGS
I
D
V
(BR)DSS
V
DGR
V
GS
P
DISS
T
J
T
STG
θ
JC
6.0 A
120 V
120 V
±
40 V
115 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
1.52
O
C/W
DIM
A
B
C
D
E
F
G
H
I
J
.240 / 6.10
.004 / 0.10
.085 / 2.16
.160 / 4.06
MINIMUM
inches / mm
I
GH
MAXIMUM
inches / mm
.220 / 5.59
.785 / 19.94
.720 / 18.29
.970 / 24.64
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
ORDER CODE: ASI10708
CHARACTERISTICS
SYMBOL
V
(BR)DSS
I
DSS
I
GSS
V
GS
G
FS
C
iss
C
oss
C
rss
P
G
η
D
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 20 V
V
DS
= 10 V
V
GS
= 10 V
T
C
= 25
O
C
NONETEST
CONDITIONS
I
DS
= 10 mA
V
DS
= 50 V
V
DS
= 0 V
I
D
= 10 mA
I
D
= 2.5 A
MINIMUM TYPICAL MAXIMUM
125
---
---
1.0
800
---
---
---
---
---
115
30.0
6.5
15
50
16
60
---
1.0
100
5.0
---
UNITS
V
mA
µ
A
V
mS
V
GS
= 50 V
V
DS
= 0 V
F = 1.0 MHz
pF
V
DD
= 50 V
f = 175 MHz
I
DQ
= 100 mA
P
OUT
= 30 W
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
