VFT300-28
VHF POWER MOSFET
Silicon N-Channel Enhancement Mode
DESCRIPTION:
The
VFT300-28
is Designed for
Wideband High Power VHF Amplifier
Applications operating up to 250 MHz.
PACKAGE STYLE .400 BAL FLG (D)
A
.080x45°
B
FULL R
(4X).060 R
E
.1925
D
M
C
FEATURES:
•
P
G
= 14 dB Typical at 175 MHz
• η
D
= 55% Typ. at P
OUT
= 300 Watts
•
Omnigold™
Metalization System
F
G
H
I
N
L
J
K
DIM
A
MINIMUM
inches / mm
MAXIMUM RATINGS
I
D
V
(BR)DSS
V
DGR
V
GS
P
DISS
T
J
T
STG
θ
JC
16 A
65 V
65 V
±
40 V
500 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
0.35 °C/W
T
C
= 25 °C
.220 / 5.59
.210 / 5.33
.125 / 3.18
.380 / 9.65
.580 / 14.73
.435 / 11.05
1.090 / 27.69
1.335 / 33.91
.003 / 0.08
.060 / 1.52
.100 / 2.54
.395 / 10.03
.850 / 21.59
B
C
D
E
F
G
H
I
J
K
L
M
N
MAXIMUM
inches / mm
.230 / 5.84
.390 / 9.91
.620 / 15.75
1.105 / 28.07
1.345 / 34.16
.007 / 0.18
.070 / 1.78
.115 / 2.92
.230 / 5.84
.407 / 10.34
.870 / 22.10
ORDER CODE: ASI10707
MINIMUM TYPICAL MAXIMUM
65
5.0
1.0
1.0
3500
375
188
26
12
50
14
55
5.0
1.5
CHARACTERISTICS
SYMBOL
V
(BR)DSS
I
DSS
I
GSS
V
GS
V
DS
G
FS
C
iss
C
oss
C
rss
G
PS
η
D
V
GS
= 0 V
V
DS
= 28 V
V
DS
= 0 V
V
DS
= 10 V
V
GS
= 10 V
V
DS
= 10 V
NONETEST
CONDITIONS
I
DS
= 100 mA
V
GS
= 0 V
V
GS
= 20 V
I
D
= 100 mA
I
D
= 10 A
I
D
= 5 A
UNITS
V
mA
µA
V
V
mS
V
GS
= 28 V
V
DD
= 28 V
f = 175 MHz
V
DS
= 0 V
I
DQ
= 2 x 250 mA
F = 1.0 MHz
P
OUT
= 300 W
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
