VFT45-28
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The
VFT80-28
is a gold metallized N-
Channel Enhancement mode
MOSFET, intended for use in 28 VDC
large signal applications to 400 MHz.
PACKAGE STYLE .380 4L FLG
B
.112 x 45°
A
FEATURES:
S
D
S
C
D
E
Ø.125 NOM.
FULL R
J
.125
•
P
G
= 10 dB Typical at 175 MHz
•
Omnigold™
Metalization System
•
Class-A or AB
•
2 – 400 MHz operation
G
F
I
GH
MAXIMUM RATINGS
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
I
D
V
(BR)DSS
V
DGR
V
GS
P
DISS
T
J
T
STG
θ
JC
7.0 A
60 V
60 V
±
20 V
100 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
1.8 °C/W
A
B
C
D
E
F
G
H
I
J
.220 / 5.59
.785 / 19.94
.720 / 18.29
.970 / 24.64
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.004 / 0.10
.085 / 2.16
.160 / 4.06
.240 / 6.10
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
ORDER CODE: ASI10704
CHARACTERISTICS
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS
g
fs
C
iss
C
oss
C
rss
P
G
η
D
T
C
= 25 °C
NONE
TEST CONDITIONS
I
DS
= 10 Ma
V
DS
= 28 V
V
DS
= 0 V
I
D
= 25 mA
I
D
= 1 A
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 20 V
V
DS
= 10 V
V
DS
= 10 V
MINIMUM
60
TYPICAL MAXIMUM
5.0
1.0
UNITS
V
mA
µ
A
V
mho
1.0
0.7
52
87
8
12
50
14
60
6.0
V
DS
= 28 V
V
DD
= 28 V
P
IN
= 2.85 W
V
GS
= 0 V
I
DQ
= 25 mA
f = 1.0 MHz
P
out
= 45 W
f = 175 MHz
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/2
ASI [ ADVANCED SEMICONDUCTOR ]
