欢迎访问ic37.com |
会员登录 免费注册
发布采购

VFT80-28 参数 Datasheet PDF下载

VFT80-28图片预览
型号: VFT80-28
PDF下载: 下载PDF文件 查看货源
内容描述: 甚高频功率MOSFET N沟道增强模式 [VHF POWER MOSFET N-Channel Enhancement Mode]
分类和应用:
文件页数/大小: 1 页 / 22 K
品牌: ASI [ ADVANCED SEMICONDUCTOR ]
   
VFT80-28
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The
VFT80-28
is Designed for
General Purpose Class B Power
Amplifier Applications up to 175 MHz.
PACKAGE STYLE .380 4L FLG
B
.112 x 45°
A
FEATURES:
P
G
= 10 dB Typical at 175 MHz
10:1 Load VSWR
Capability
Omnigold™
Metalization System
F
S
G
C
D
E
D
S
Ø.125 NOM.
FULL R
J
.125
MAXIMUM RATINGS
I
C
V
CB
V
CE
P
DISS
T
J
T
STG
θ
JC
10 A
DIM
MINIMUM
inches / mm
I
GH
MAXIMUM
inches / mm
60 V
35 V
140 W @ T
C
= 25 C
-65
O
C to +200
O
C
-65 C to +150 C
1.5
O
C/W
O
O
O
A
B
C
D
E
F
G
H
I
J
.220 / 5.59
.785 / 19.94
.720 / 18.29
.970 / 24.64
.004 / 0.10
.085 / 2.16
.160 / 4.06
.240 / 6.10
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
ORDER CODE: ASI10705
NONE
CHARACTERISTICS
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
C
iss
C
oss
C
rss
P
G
η
D
ψ
T
C
= 25
O
C
TEST CONDITIONS
I
D
= 100 mA
V
DS
= 28 V
V
DS
= 0 V
I
D
= 50 mA
I
D
= 2 A
V
GS
= 0 V
V
GS
= 20 V
V
DS
= 10 V
V
DS
= 10 V
MINIMUM
60
TYPICAL MAXIMUM
5.0
1.0
UNITS
V
mA
µ
A
V
mS
1.0
1200
105
165
20
10
50
12
60
6.0
V
DS
= 28 V
V
DD
= 28 V
V
GS
= 0 V
I
DQ
= 25 mA
f = 1.0 MHz
P
out
= 80 W
f = 175 MHz
pF
dB
%
V
SWR
= 30:1
AT ALL PHASE ANGLES
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1