VHB1-12T
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI VHB1-12T
is Designed for
Class C, 12.5 V High Band Applications
up to 175 MHz.
FEATURES:
•
Class C Operation
•
P
G
= 10 dB at 1.0 W/175 MHz
•
Omnigold™
Metalization System
PACKAGE STYLE TO-39
B
ØA
45°
C
ØD
E
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
CER
V
EBO
P
DISS
T
J
T
STG
θ
JC
400 mA
(MAX)
40 V
20 V
40 V
DIM
F
G
H
MINIMUM
inches / mm
MAXIMUM
inches / mm
2.0 V
3.5 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
20 °C/W
A
B
C
D
E
F
G
H
.016 / 0.407
.029 / 0.740
.028 / 0.720
.335 / 8.510
.305 / 7.750
.240 / 6.100
.200 / 5.080
.045 / 1.140
.034 / 0.860
.370 / 9.370
.335 / 8.500
.260 / 6.600
.500 / 12.700
.020 / 0.508
ORDER CODE: ASI10711
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CER
BV
EBO
I
CEO
h
FE
V
CE(SAT)
C
OB
P
G
η
C
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 5.0 mA
I
C
= 5.0 mA
I
E
= 100
µA
V
CE
= 12 V
V
CE
= 5.0 V
I
C
= 100 mA
V
CB
= 12.5 V
V
CE
= 12.5 V
P
OUT
= 1.0 W
I
C
= 100 mA
I
B
= 20 mA
f = 1.0 MHz
f = 175 MHz
R
BE
= 10
Ω
MINIMUM TYPICAL MAXIMUM
20
40
2.0
0.2
10
200
0.5
4.0
10
60
UNITS
V
V
V
mA
---
Vdc
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
