VHB100-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI VHB100-12
is a Class-C,
12.5 V epitaxial silicon NPN transistor.
Designed primarily for VHF, FM
communication, Diffused ballast
resistor gives it high VSWR capability,
good gain & efficiency over the 136-
175 MHz band.
PACKAGE STYLE .500 6L FLG
C
A
3
D
1
2x Ø N
FU LL R
FEATURES:
•
175 MHz 12.5 V
•
Internal Input Matching Network
•
P
G
= 6.0 dB at 100 W/175 MHz
•
Omnigold™
Metalization System
•
Common Emitter configuration
B
G
2
.725/18,42
F
4
E
K
H
D IM
A
M IN IM U M
inches / m m
M
L
J
I
M A XIM U M
inches / m m
.150 / 3.43
.045 / 1.14
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
.125 / 3.18
.725 / 18.42
.970 / 24.64
.090 / 2.29
.150 / 3.81
.120 / 3.05
.160 / 4.06
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
CES
V
EBO
P
DISS
T
J
T
STG
θ
JC
20 A
36 V
18 V
36 V
4.0 V
270 W @ T
C
= 25 °C
-65 °C to +200 ° C
-65 °C to +150 °C
0.65 °C/W
B
C
D
E
F
G
H
I
J
K
L
M
N
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
1 = Collecttor 2 = Base 3&4 = Emitter
ORDER CODE: ASI10719
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
CBO
BV
EBO
I
CES
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 100 mA
I
C
= 100 mA
I
C
= 50 mA
I
E
= 10 mA
V
CE
= 12.5 V
MINIMUM TYPICAL MAXIMUM
18
36
36
4.0
15
UNITS
V
V
V
V
mA
REV. C
1/2
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
ASI [ ADVANCED SEMICONDUCTOR ]
