VHB25-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI VHB25-12S
is Designed for
PACKAGE STYLE .380 4L STUD
.112x45°
A
FEATURES:
•
•
•
Omnigold™
Metalization System
B
ØC
D
H
I
J
MAXIMUM RATINGS
#8-32 UNC-2A
G
F
E
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
4.0 A
36 V
18 V
4.0 V
65 W @ T
C
= 25 C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
3.5
O
C/W
O
DIM
A
B
C
D
E
F
G
H
I
J
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
ORDER CODE: ASI10715
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CBO
h
FE
C
OB
P
G
η
C
I
C
= 50 mA
I
C
= 15 mA
T
C
= 25 C
O
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
18
36
4.0
5.0
UNITS
V
V
V
mA
---
pF
dB
I
E
= 5.0 mA
V
CB
= 28 V
V
CE
= 5.0 V
V
CB
= 12.5 V
V
CE
= 12.5 V
P
OUT
= 25 W
I
C
= 250 mA
f = 1.0 MHz
f = 175 MHz
20
---
110
10
60
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
