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VHB40-12F 参数 Datasheet PDF下载

VHB40-12F图片预览
型号: VHB40-12F
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅射频功率晶体管 [NPN SILICON RF POWER TRANSISTOR]
分类和应用: 晶体射频双极晶体管放大器局域网
文件页数/大小: 1 页 / 21 K
品牌: ASI [ ADVANCED SEMICONDUCTOR ]
   
VHB40-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
VHB40-12F
is Designed for
Class C Amplifier Applications in VHF
Mobile Radios.
PACKAGE STYLE .380 4L FLG
B
.112 x 45°
A
Ø.125 NOM.
FULL R
J
.125
FEATURES:
P
G
= 9.5 dB Typ. at 40 W /175 MHz
• η
C
= 60% Typ. at 40 W /175 MHz
Omnigold™
Metalization System
C
D
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
O
O
F
E
H I
5.0 A
36 V
18 V
4.0 V
70 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +150 C
2.9 C/W
O
DIM
A
B
C
D
MINIMUM
inches / mm
G
MAXIMUM
inches / mm
.220 / 5.59
.785 / 19.94
.720 / 18.29
.970 / 24.64
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
O
E
F
G
H
I
.004 / 0.10
.085 / 2.16
.160 / 4.06
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
O
O
J
.240 / 6.10
.255 / 6.48
O
ORDER CODE: ASI10716
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CES
h
FE
C
ob
P
G
η
C
I
C
= 50 mA
I
C
= 50 mA
I
C
= 50 mA
I
E
= 10 mA
V
CE
= 15 V
T
C
= 25 C
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
36
36
18
4.0
5.0
UNITS
V
V
V
V
mA
---
pF
dB
%
V
CE
= 5.0 V
V
CB
= 12.5 V
V
CC
= 12.5 V
I
C
= 5.0 A
f = 1.0 MHz
P
OUT
= 40 W
f = 175 MHz
20
200
135
8.5
60
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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