VHB50-28S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI VHB50-28S
is an NPN
power transistor designed for 25 V
Class-C ground station transmitters, it
utilizes emitter ballasting and gold
metalization to provide optimum
VSWR capability.
PACKAGE STYLE .380 4L STUD
.112x45°
A
B
C
E
ØC
FEATURES:
•
Common Emitter
•
P
G
= 6.0 dB at 50 W/175 MHz
•
Omnigold™
Metalization System
•
P
G
= 7.0 dB at 60 W/150 MHz
E
B
D
H
I
J
#8-32 UNC-2A
F
E
G
MAXIMUM RATINGS
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
6.5 A
65 V
35 V
4.0 V
75W
-65 °C to +200 °C
-65 °C to +150 °C
2.3 °C/W
A
B
C
D
E
F
G
H
I
J
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
ORDER CODE: ASI10730
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CBO
h
FE
C
ob
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 200 mA
I
C
= 200 mA
I
E
= 10 mA
V
CB
= 30 V
V
CE
= 5.0 V
V
CB
= 28 V
I
C
= 500 mA
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
35
65
4.0
2.0
10
150
80
UNITS
V
V
V
mA
---
pF
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
1/2
ASI [ ADVANCED SEMICONDUCTOR ]
